Cov lus teb ceev ntawm diodes tseem ceeb npaum li cas hauv cov khoom siv kho qhov muag?

1, Technical hauv paus ntsiab lus: Lub cev tseem ceeb ntawm kev teb ceev
Cov lus teb ceev ntawm lub diode yog qhov tseem ceeb ntawm kev xav txog kev tsim, kev sib kis, thiab cov txheej txheem rov ua dua ntawm cov duab tsim cov khoom thauj. Thaum lub zog photon tshaj qhov bandgap dav ntawm cov khoom siv semiconductor, valence band electrons hloov mus rau qhov conduction band los ua electron hole khub, tsim photocurrent nyob rau hauv qhov kev txiav txim ntawm lub built- nyob rau hauv hluav taws xob teb. Cov txheej txheem no suav nrog peb lub sijhawm tseem ceeb:

Carrier tiam lub sij hawm: Vim muaj kev cuam tshuam ntawm cov khoom nqus coefficient, cov ntaub ntawv ncaj qha bandgap xws li gallium arsenide (GaAs) tuaj yeem ua tiav photon absorption thiab cov neeg nqa khoom tiam hauv picoseconds, thaum cov ntaub ntawv tsis ncaj qha bandgap xws li silicon xav tau nanoseconds.
Lub sijhawm thauj khoom thauj mus los: PIN diodes ua kom luv rau cov neeg nqa khoom thauj mus rau qib micrometer los ntawm kev ua kom zoo ntawm cov txheej txheem sab hauv, thiab nrog cov khoom siv hluav taws xob siab xws li indium phosphide InP, lub sijhawm thauj mus los tuaj yeem tswj tau li ntawm 10ps.
Kev sib tshuam capacitance effect: Cov kab mob parasitic capacitance ntawm lub diode yuav tsim RC qeeb. Los ntawm kev siv cov qauv heterojunction thiab kev siv thev naus laus zis saum npoo av, qhov kev sib tshuam tuaj yeem raug txo kom qis dua 0.1pF, txhim kho qhov siab - zaus teb muaj peev xwm.
Siv daim ntawv thov Tektronix oscilloscope hauv kev kuaj lidar ua piv txwv, nws cov avalanche photodiode (APD) tuaj yeem ua tiav 0.5ns lub sijhawm teb ntawm 1550nm wavelength los ntawm kev nce hauv cov txheej txheem, thiab tuaj yeem ntes tau qhov puag ncig - lub sijhawm mus ncig ntawm nanosecond laser pulse nrog 20GHz bandwidth, uas tuaj yeem ua kom muaj zog oscill. centimeter theem positioning raug nyob rau hauv 200m deb.

2, Daim ntawv thov scenario: Ceev txiav txim siab system efficiency
1. Muaj automation kuaj
Hauv kev tshawb nrhiav qhov tsis xws luag ntawm 3C cov khoom lag luam, linear CCD lub koob yees duab siv lub InGaAs photodiode array nrog lub sij hawm teb ntawm 2ns, ua ke nrog 100kHz kab scanning zaus, kom ua tiav micrometer theem tsis zoo lees paub ntawm A4 loj panels hauv 0.1 vib nas this. Lub tuam txhab ntim khoom semiconductor tau hloov kho nws qhov kev tshawb pom wafer los ntawm 300 wafers ib teev mus rau 800 wafers ib teev los ntawm kev hloov kho mus rau 0.5ns teb APD sensor, ua rau 37% nce hauv tag nrho cov cuab yeej siv tau zoo (OEE).

2. Kev kuaj pom kev kho mob
Hauv OCT (Optical Coherence Tomography) cov cuab yeej, lub ntsuas ntsuas ntsuas tau txais tus lej PIN dual diode sib txawv qauv, ua tiav 15 μ m axial daws teeb meem ntawm wavelength ntawm 1310nm nrog lub sijhawm teb ntawm 0.3ns. Tom qab kev txhim kho ntawm ophthalmic OCT system, kaum txheej txheej ntawm retina tuaj yeem ua kom pom tseeb, uas txhim kho qhov tseeb ntawm kev kuaj mob ntxov ntawm ntshav qab zib retinopathy los ntawm 78% mus rau 92%.

3. Laser kev sib txuas lus system
Hauv 100Gbps kho qhov muag module, tus PIN diode ua ke nrog transimpedance amplifier (TIA) ua tiav lub sij hawm teb ntawm 0.8ns ntawm lub wavelength ntawm 1550nm, kom ntseeg tau tias qhov muag qhib thiab kaw qib siab dua 80% thiab qhov yuam kev me ntsis (BER) zoo dua 10² ⁻ . Ib lub chaw pabcuam tau siv cov thev naus laus zis no los ua kom muaj peev xwm kis tau tus kabmob ib leeg los ntawm 40Tbps mus rau 100Tbps, txo qis zog siv zog ntawm 42%.

4. Kev saib xyuas ib puag ncig
Hauv LIDAR atmospheric detection system, APD array nrog lub sij hawm teb ntawm 0.2ns yog siv, ua ke nrog 532nm laser pulses, los saib xyuas aerosol concentration faib nyob rau hauv tiag - lub sij hawm nyob rau hauv ib qhov siab ntawm 20km. Tom qab txhim kho nws cov cuab yeej siv, lub chaw saib xyuas huab cua txuas ntxiv lub sijhawm kwv yees PM2.5 los ntawm 6 teev txog 24 teev, nce qhov tseeb ntawm kev kwv yees los ntawm 18 feem pua.

3, Kev ua tau zoo ntawm kev ua tau zoo: ntau qhov kev siv thev naus laus zis
1. Cov khoom siv tshiab
Gallium nitride (GaN) raws li diodes ua tiav 0.1ns teb ntawm lub wavelength ntawm 405nm, uas yog tsib zaug siab dua li cov khoom siv GaAs. Lawv tau siv rau hauv lub teeb xiav lub teeb DVD nyeem lub taub hau thiab underwater laser kev sib txuas lus.
Quantum dot cov ntaub ntawv nthuav dav lub wavelength ntau ntawm diode teb rau 300-2000nm los ntawm kev kho qhov dav bandgap, ua tau raws li qhov yuav tsum tau muaj ntawm kev kuaj mob ntau yam.
2. Kev ua kom zoo dua qub
Qhov saum npoo plasmon txhim kho cov qauv txhim kho lub photoelectric hloov dua siab tshiab los ntawm 30% los ntawm thaj chaw txhim kho cov nyhuv ntawm cov hlau nanoparticles, thaum tuav cov lus teb ceev ntawm 0.5ns.
3D integration technology vertically stacks diodes nrog TIA chips, txo cov kab mob parasitic capacitance los ntawm 60% thiab ua tiav module teb bandwidth tshaj 30GHz.
3. Kev txhim kho txheej txheem
Molecular beam epitaxy (MBE) thev naus laus zis tuaj yeem tswj hwm kev npaj cov txheej txheem semiconductor nrog atomic theem flatness, txo qis tam sim no tsaus rau 0.1nA thiab txhim kho cov teeb liab - rau - suab nrov piv los ntawm 20dB.
Sib sib zog nqus ion etching (DRIE) thev naus laus zis ua tiav cov txheej txheem kev ua haujlwm micro, txo cov diode hlws ris capacitance mus rau 0.05pF thiab txhim kho siab - cov yam ntxwv zaus.