Yuav ua li cas daws qhov kev sib tw ntawm siab - zaus diodes hauv lub zog?

Ib, Cov ntsiab lus mob tseem ceeb ntawm siab - cov kev sib tw zaus
1. Electromagnetic cuam tshuam (EMI) tsis muaj kev tswj xyuas
The high-frequency switching action (such as the di/dt of SiC MOSFET reaching 10 ³ -10 ⁴ A/μ s) will produce steep voltage spikes (dv/dt>10kV / μ s), uas ua rau muaj kev cuam tshuam loj heev thiab kev cuam tshuam hluav taws xob. Piv txwv li, hauv photovoltaic inverters, siab - lub suab nrov zaus tuaj yeem cuam tshuam rau qhov ntsuas hluav taws xob ntawm daim phiaj hluav taws xob, ua rau cov ntaub ntawv tsis raug ntau dua 5%; Hauv 5G hauv paus chaw nres tsheb, EMI spectrum txuas ntxiv tshaj 30MHz, uas yog dhau qhov kev txwv ntau ntawm cov lim dej LC. Ntau qhov kev txiav txim π - hom lim yuav tsum tau tsim, tab sis nws yuav ua rau kom poob ntxiv los ntawm 2-3%.

2. Sudden nce hauv thermal tswj siab
High zaus nce lub zog ceev mus rau ntau dua 15kW / L, uas ua rau muaj kev nce siab hauv kev tsim hluav taws xob hauv ib chav tsev. Noj cov tsav inverter ntawm lub zog tshiab tsheb ua piv txwv, qhov sib txuas kub ntawm SiC diodes yuav tsum tau tswj hauv qab 125℃nyob rau hauv siab -frequency operation, thiab cov huab cua ib txwm siv-txias tshav kub dissipation efficiency yog tsis txaus (tsawg dua los yog sib npaug rau 50W / (m ² · K)), tab sis yuav tsum tau ua kom txias cov khoom siv + thiab nqi. Tsis tas li ntawd, siab - zaus transformers yog nquag rau hauv zos winding kub tshaj 150℃vim ntawm daim tawv nqaij thiab qhov sib thooj cuam tshuam, ntxiv exacerbating txoj kev pheej hmoo ntawm thermal runaway.

3. Cov khoom siv ua tau zoo thiab ntim cov fwj
Cov khoom siv niaj hnub silicon-raws li cov ntaub ntawv ua rau lawv lub cev txwv tsis pub muaj ntau zaus: lub sij hawm rov qab los (TRR) ntawm silicon diodes tuaj yeem ncav cuag kaum rau ntau pua nanoseconds, uas ua rau kev poob nyiaj ntau dua 30%; Cov hlau poob ntawm silicon steel sheet transformers ntawm 100kHz yog ntau tshaj 100 npaug ntawm lub zog zaus, yuav tsum tau siv high- zaus sib nqus cov ntaub ntawv xws li nanocrystalline alloys, tab sis tus nqi siab (5-8 npaug ntawm cov ntawv silicon steel). Nyob rau hauv cov nqe lus ntawm ntim, ib txwm ntim TO-247 nthuav qhia cov kab mob parasitic inductance siab tshaj 100kHz, yuav tsum tau hloov mus rau flip nti lossis cov ntim ntim. Txawm li cas los xij, txoj kev tshav kub dissipation yog qhov nyuaj thiab tus nqi nce 20-30%.

2, Technological breakthrough: tag nrho cov saw optimization los ntawm cov khoom siv rau lub tshuab
1. Kev siv cov khoom siv semiconductor tshiab
Silicon carbide (SiC) diode: Lub bandgap dav ntawm SiC cov khoom yog peb npaug ntawm silicon, lub zog hluav taws xob tawg mus txog 2-3MV / cm, thiab lub sij hawm rov qab tuaj yeem luv luv rau ntau kaum nanoseconds. Nyob rau hauv photovoltaic inverters, SiC diodes txo kev hloov pauv los ntawm 30% thiab ua tiav kev hloov dua siab tshiab tshaj 98%; Nyob rau hauv lub tsav inverter ntawm lub zog tshiab tsheb, nws kub stability (hluav taws xob kub mus txog 200 degree) txhawb 800V high-voltage platform, thiab lub radiator ntim yog txo los ntawm 40%.
Gallium Nitride (GaN) Diode: GaN muaj lub zog hluav taws xob ntawm 2000cm ² / (V · s), ua rau nws haum rau RF thiab siab - cov ntawv thov zaus. Nyob rau hauv millimeter nthwv dej pem hauv ntej kawg ntawm 5G hauv paus chaw nres tsheb, GaN diodes ua tiav cov teeb liab kho tau zoo thiab nrhiav kom pom, txo qis kev siv hluav taws xob los ntawm 30% piv rau cov khoom siv silicon, thiab txhawb kev ua haujlwm ruaj khov hauv 24GHz-52GHz zaus band.
Ob qhov khoom siv diode: Graphene diode siv xoom bandgap yam ntxwv kom ua tiav siab - nrawm hloov hauv terahertz (THz) zaus band, muab cov khoom tseem ceeb rau 6G kev sib txuas lus ua ntej kev tshawb fawb; MoS ₂ diodes ua tiav cov txheej txheem kho kom zoo los ntawm cov qauv heterojunction, hloov ntau yam khoom siv hauv cov khoom siv rov ua dua tshiab thiab txhim kho kev sib koom ua ke thiab kev siv hluav taws xob.
2. Kev tsim kho tshiab hauv kev ntim tshuab
Peb txoj kab ntsug ntsug: Los ntawm kev siv cov trench sib sib zog nqus etching thiab epitaxial txoj kev loj hlob, txoj kev kis tau tus mob tam sim no tau hloov pauv los ntawm kab rov tav mus rau ntsug, nce qhov ceev tam sim no mus rau ntau dua 200A / cm². Vertical SiC PiN diodes tuaj yeem tiv taus ntau txhiab volts ntawm qhov hluav taws xob rov qab nyob rau hauv siab -voltage direct tam sim no kis (HVDC) systems, txo tus naj npawb ntawm cov chaw nres tsheb converter thiab cov kev poob.
Nto mount technology (SMT) thiab flip nti technology: SMT ntim tsub kom qhov chaw sib cuag ntawm diodes thiab Circuit Court boards, kev txhim kho tshav kub dissipation efficiency los ntawm 40%; Inverted nti thev naus laus zis ua kom luv luv ntawm kev sib txuas ntawm cov chips thiab Circuit Court boards, txo cov teeb liab kis tau tus mob thiab thermal kuj, thiab yog haum rau siab - zaus thiab siab tam sim no scenarios nyob rau hauv high -kawg hluav taws xob.
Tsis tshua muaj kab mob parasitic ntim: Siv cov khoom siv hluav taws xob tsawg inductance thiab cov ntaub ntawv muaj peev xwm qis kom txo tau qhov cuam tshuam ntawm kev ntim cov kab mob parasitic rau siab -frequency performance. Piv txwv li, cov kab mob parasitic inductance ntawm SiC module ntim tsim los ntawm qee lub lag luam yog tsawg li 2nH, thiab nws txhawb nqa qhov hloov pauv mus rau saum 1MHz.
3, System Optimization: Kev sib koom ua ke ntawm kev tsim kho tshiab rau kev ua haujlwm
1. EMI tiv thaiv thiab electromagnetic compatibility (EMC) tsim
Multi-order filtering thiab shielding technology: Hauv photovoltaic inverters, kev sib xyaw ua ke ntawm π - hom lim thiab hom hom chokes yog siv los txhawm rau siab - lub suab nrov tshaj 30MHz; Nyob rau hauv lub zog tshiab lub tsheb them chaw nres tsheb, shielding tooj liab ntawv ci thiab hlau npog yog siv los txo cov hluav taws xob hluav taws xob thiab ua tau raws li CISPR 32 cov qauv.
Mos hloov tshuab: Los ntawm kev siv xoom voltage hloov (ZVS) lossis xoom tam sim no hloov (ZCS) kom txo di / dt thiab dv / dt, thim rov qab poob qis. Piv txwv li, tom qab siv cov cuab yeej hloov pauv mus rau qee yam khoom siv hluav taws xob hluav taws xob, kev siv hluav taws xob tag nrho ntawm lub kaw lus poob qis dua 25%.
AI tsav dynamic EMI kev tswj hwm: siv tshuab kev kawm qauv los txheeb xyuas cov ntaub ntawv keeb kwm kev ua haujlwm, kwv yees qhov kev hloov pauv tam sim no, thiab ua kom zoo dua diode tswj cov tswv yim. Piv txwv li, ib qho tswv yim patent siv neural tes hauj lwm los kho lub sijhawm ua haujlwm ntawm lub sijhawm, txo EMI suab nrov los ntawm 15dB.
2. Kev txawj ntse txawj tej yam ntxiv ntawm thermal tswj system
Ua kua txias thiab theem hloov khoom siv (PCM) cov khoom siv hluav taws xob sib xyaw ua ke: Hauv lub zog hluav taws xob ntawm cov chaw khaws ntaub ntawv, cov txheej txheem cua sov ntawm cov kua txias phaj + PCM sau tau txais los ua kom ruaj khov ntawm qhov kub thiab txias ntawm SiC diodes hauv qab 125℃thiab nce lub zog ceev mus rau 20kW / L.
Thermal simulation thiab topology optimization: Simulate lub tshav kub ntws faib ntawm siab - zaus diodes siv cov cuab yeej xws li ANSYS Icepak, optimize PCB layout thiab heat sink tsim. Piv txwv li, lub zog tshiab lub tsheb OBC qhov project txo qhov ntim ntawm lub dab dej kub los ntawm 30% thiab txo qis qhov kub thiab txias los ntawm 5℃los ntawm thermal simulation.
Intelligent kub them algorithm: Nyob rau hauv lub zog cia inverter system, AI algorithm dynamically kho lub diode tsav voltage raws li tiag tiag -lub sij hawm kub nce kom tsis txhob overheating tsis ua hauj lwm. Ib qho kev lag luam cov phiaj xwm txuas ntxiv lub neej ua haujlwm tsis tu ncua ntawm lub cev mus rau ntau tshaj 10 xyoo hauv 45℃ib puag ncig.