Yuav ntsuas lub neej ntawm diodes hauv kev sib txuas lus li cas?

1, Mechanism ntawm diode tsis ua hauj lwm hauv kev sib txuas lus scenarios
Cov khoom degradation tshwm sim los ntawm thermal stress
Qhov kub thiab txias yog lub hauv paus ua rau lub diode tsis ua haujlwm hauv cov khoom siv sib txuas lus. Kev sim cov ntaub ntawv qhia tau hais tias thaum qhov sib txuas kub siab tshaj 150 degree, qhov rov qab xau tam sim no ntawm silicon-raws li diodes txo los ntawm 50% rau txhua txhua 10℃nce nyob rau hauv rov qab to tam sim no. Tom qab ua haujlwm tsis tu ncua rau 1000 teev ntawm 125 degree, qee yam khoom siv xov tooj cua sib txuas lus tau ntsib 12% tev tus nqi ntawm txheej metallization vim thermal stress, uas ncaj qha ua rau qhib Circuit Court txhaum.
Parameter drift tshwm sim los ntawm hluav taws xob kev nyuaj siab
Lub sij hawm ntev raug rau overvoltage los yog overcurrent tuaj yeem ua kom qhov degradation ntawm diode tsis. Siv lub tshuab hluav taws xob hluav taws xob diode ua piv txwv, thaum lub zog ua haujlwm siab tshaj 10% ntawm tus nqi ntsuas, qhov kev cuam tshuam txhua xyoo ntawm qhov hluav taws xob tawg tuaj yeem ncav cuag 0.5V, ua rau tsis ua haujlwm ntawm kev tiv thaiv Circuit Court. Ib lub tsheb mounted radar system tau ntsib diode overvoltage vim lub zog hloov pauv, ua rau muaj qhov nce peb zaug hauv qhov tsis ua tiav hauv peb lub hlis.
Ntim tsis ua hauj lwm tshwm sim los ntawm mechanical stress
Nyob rau hauv kev co, cov qauv ntim ntawm diodes yog nquag mus rau microcracks. Ib qho kev sim ua ntawm ib qho chaw nres tsheb tau pom tias nyob rau hauv kev vibration acceleration ntawm 10g, daim ntawv cog lus hlau detachment tus nqi ntawm TO-220 ntim diodes tau nce 8 zaug piv rau lub xeev zoo li qub. Tsis tas li ntawd, kev ntxhov siab ntawm cov av tuaj yeem ua rau cov khoom ntim kom nqus cov dej noo thiab nthuav dav, ua rau kev cuam tshuam ntawm delamination.
2, Kev ntsuas lub neej txoj kev ntsuas
Accelerated Life Test (ALT)
Accelerating cov txheej txheem kev laus ntawm diodes los ntawm nce kev ntxhov siab xws li kub thiab voltage.
Arrhenius qauv: Rau txhua txhua 10℃qhov kub thiab txias, lub neej luv luv los ntawm 1/2 txog 1/3. Ib qho SiC Schottky diode dhau 1000 teev ntawm ALT ntawm 175 degree, uas yog sib npaug rau 100000 teev ntawm kev ua haujlwm ntawm 25 degree.
Coffin Manson qauv: siv los ntsuas lub neej qaug zog los ntawm thermal cycling. Ib qho hluav taws xob diode ua tsis tiav tom qab 500 lub voj voog ntawm thermal cycling ntawm -40℃~ 125 degree, sib npaug rau 10 xyoo ntawm qhov chaw lifespan.
Kev ntseeg lub cev qauv
Tsim kom muaj tus qauv kwv yees lub neej raws li cov khoom siv thiab cov txheej txheem tsis ua haujlwm.
Electron migration model: Xav txog qhov cuam tshuam ntawm qhov ceev tam sim no thiab qhov kub thiab txias ntawm lub neej ntawm cov hlau interconnect txheej. Lub sijhawm qhib lub neej ntawm GaN HEMT tsav diode tshwm sim los ntawm electron migration ntawm qhov ceev tam sim no ntawm 10A / mm ² yog 50000 teev.
Thermal resistance model: xam qhov kub thiab txias thiab kwv yees lub neej thermal tsis ua hauj lwm los ntawm thermal resistance (Rth). DFN8 × 8 ntim diode muaj qhov sib txuas kub ntawm 150℃thiab lub neej tsuas yog 20000 teev ntawm lub zog siv 2W.
Kev Tshawb Fawb Txog Kev Tshawb Fawb
Sau rau ntawm - cov ntaub ntawv tsis raug ntawm qhov chaw thiab ntsuas lub neej siv txoj hauv kev xws li Weibull kev faib tawm.
Ib qho khoom siv sib txuas lus: Tom qab taug qab 100000 diodes rau 3 xyoos, nws tau pom tias B10 muaj lub neej ntev (10% lub sijhawm tsis ua haujlwm) ntawm 80000 teev thiab B50 muaj lub neej ntev ntawm 150000 teev.
Kev ntsuam xyuas hom tsis ua haujlwm: Thermal tsis ua haujlwm rau 60%, hluav taws xob kev ntxhov siab tsis ua haujlwm rau 25%, thiab txhua yam tsis ua haujlwm suav txog 15%.
3, Lub neej optimization lub tswv yim
Kev tsim kho tshiab hauv cov khoom siv thiab cov txheej txheem
Wide bandgap semiconductor: SiC diodes muaj lub neej ntev 5 zaug ntev dua Si li ntawm 200 degree. Cree Company's 1200V SiC SBD muaj MTBF ntawm 200000 teev ntawm 175 degree.
3D ntim tshuab: siv TSV ntsug interconnection, txo thermal kuj los ntawm 40%. Amkor SiP ntim diodes muaj qhov sib txuas kub tswj hauv 120℃ntawm lub zog noj ntawm 10W.
Optimization ntawm passivation txheej: Qhia ib SiN / Al ₂ O ∝ composite passivation txheej los txo qhov thim rov qab kub coefficient ntawm 0.5% /℃rau 0.1% / degree.
System theem thermal tswj
Microchannel kua txias: Huawei lub hauv paus chaw nres tsheb siv silicon-raws li microchannel kua txias daim hlau, uas txo cov hlws ris kub ntawm diodes los ntawm 150℃mus rau 110℃thiab ncua lawv lub neej los ntawm peb zaug.
Theem hloov cov cua sov dissipation: Cov paraffin raws li theem hloov cov khoom tsim los ntawm ZTE Corporation tuaj yeem nqus 800J ntawm cov cua sov ntawm ib theem hloov ntawm 120 degree, ncua kev laus thermal.
Intelligent kub tswj: TPS25940 nti los ntawm TI lub tuam txhab dynamically kho cov zis tam sim no los ntawm kev soj ntsuam cov ntim kub, thiab txwv qhov tam sim no mus rau 70% ntawm tus nqi ntsuas ntawm 150 degree.
Circuit Court tsim optimization
Mos switching thev naus laus zis: Zero voltage switching (ZVS) tshem tawm cov hluav taws xob hluav taws xob thaum lub sijhawm rov qab los, ua kom lub neej ntev dua ntawm 60%.
Synchronous rectification: Hloov diodes nrog MOSFETs kom tshem tawm cov thermal poob tag. TI's LM5164 synchronous rectification maub los ua tiav kev ua haujlwm ntawm 96% ntawm kev hloov zaus ntawm 1MHz.
Redundancy design: Txais N+1 redundancy architecture, lub zog module ntawm ib qho chaw 5G hauv paus tseem tuaj yeem tuav 95% kev ua tau zoo txawm tias ib qho diode ua tsis tau.
https://www.trrsemicon.com/transistor/glass-passivated-bridge-rectifiers-tmbf310.html