Qhov twg diode ruaj khov dua nyob rau hauv qhov kub thiab txias?

Ib, Kub kub tsis ua hauj lwm mechanism ntawm tsoos silicon-raws li diodes
1. Kub rhiab heev ntawm PN junction diodes
Standard silicon PN hlws ris diodes pom muaj kev pheej hmoo ntawm kev ua tsis tiav ntawm qhov kub thiab txias:

Cov yam ntxwv zoo degradation: Rau txhua txhua 1℃nce hauv qhov kub thiab txias, qhov hluav taws xob rau pem hauv ntej poob qis li ntawm 2mV, uas ua rau muaj kev nce hauv kev poob. Piv txwv li, nyob rau ntawm 150 degree, lub pem hauv ntej voltage poob ntawm 1N4007 rectifier diode txo los ntawm 0.7V ntawm chav tsev kub rau 0.4V, tab sis cov conduction tam sim no nce peb npaug vim thermal excitation nyhuv, ua rau lub zos overheating.
Kev ncua sij hawm rov qab rov qab: Lub neej ntawm cov neeg nqa khoom tsawg yog ncua ntev ntawm qhov kub thiab txias, thiab lub sijhawm rov qab los (trr) txuas ntxiv los ntawm 500ns ntawm chav tsev kub mus rau ntau dua 2 μs, ua rau muaj kev hloov pauv tseem ceeb hauv siab - zaus hloov daim ntawv thov. Cov ntaub ntawv kawm ntawm ib qho kev hloov pauv ntau zaus qhia tau hais tias thaum qhov ntsuas kub ntawm qhov kub ntawm 25℃mus rau 125 degree, qhov kev hloov pauv ntawm cov txheej txheem ceev ceev rov qab nce ntxiv los ntawm 47%, uas ua rau IGBT module junction kub tshaj tus qauv.
2. Cov teeb meem tam sim no ntawm Schottky diodes
Txawm hais tias silicon-raws li Schottky diodes muaj qis rau pem hauv ntej voltage poob (0.2-0.4V) thiab ceev hloov cov yam ntxwv, lawv cov hlau semiconductor hlws ris exposes tuag tsis xws luag nyob rau hauv high kub:

Rov qab xau tam sim no qhov ntsuas kev loj hlob: Rau txhua txhua 10℃nce hauv qhov kub thiab txias, qhov dej ntws tam sim no ob npaug. Ntawm 175 degree, qhov xau tam sim no ntawm MBR2045CT Schottky diode tuaj yeem ncav cuag 10mA, deb tshaj nws qhov ntsuas rov qab tam sim no (5 μ A @ 25℃). Cov ntaub ntawv xeem ntawm lub tsheb charger qhia tau hais tias thaum lub ambient kub nce mus txog 125 degree, qhov to tam sim no ntawm ib txwm silicon Schottky diodes ua rau ib tug 3.2% txo nyob rau hauv lub system efficiency.
Kev pheej hmoo ntawm thermal runaway: Joule cua sov tsim los ntawm cov dej xau tam sim no ua rau cov lus qhia zoo nrog rau qhov kub thiab txias. Ib qho kev sim tau pom tias nyob rau hauv ib puag ncig ntawm 200 degree, ib qho tsis muaj roj silicon Schottky diode hlawv tawm vim thermal khiav hauv 30 vib nas this.
3. Voltage imbalance ntawm Zener diode
Zener diodes ntsib ob qhov kev sib tw ntawm qhov kub thiab txias:

Zener voltage drift: Nrog rau qhov kub thiab txias coefficient ntawm -2mV / degree, cov zis voltage ntawm 24V voltage regulator yuav deviate mus rau 22.8V ntawm 150 degree, cuam tshuam rau stability ntawm precision circuits.
Qhov siab tshaj plaws dissipated hwj chim attenuation: Lub thermal kuj nce nrog kub, thiab qhov tseeb dissipated hwj chim ntawm ib tug tej yam 1W voltage regulator raj poob rau 0.3W ntawm 125 degree, ua rau overheating thiab puas rau lub cuab yeej.
2, Kev kub ntxhov siab ntawm qhov dav bandgap khoom diode
1. SiC Schottky diode: redefining siab -kub conductivity
Silicon carbide cov ntaub ntawv ua tiav siab -kub ruaj khov ua haujlwm raws li peb yam tseem ceeb:

Wide bandgap suppresses leakage tam sim no: Nrog rau qhov dav bandgap ntawm 3.2eV, cov khoom siv hauv nruab nrab ntawm SiC ntawm 200℃tsuas yog 1/10 ntawm silicon. Kev sim cov ntaub ntawv qhia tau hais tias cov xau tam sim no ceev ntawm C3D02060A SiC Schottky diode ntawm 200℃tsuas yog 0.1 μ A / cm ², uas yog peb qhov kev txiav txim siab qis dua li ntawm cov khoom siv silicon.
Lub zog tawg siab ua kom tsis muaj zog ua haujlwm: Lub zog tawg ntawm lub zog 10 npaug ntawm silicon (3MV / cm) tso cai rau kev siv cov txheej nyias nyias. Kev ua haujlwm tsis zoo ntawm 1200V SiC Schottky diode tsuas yog 0.8m Ω, uas yog 90% qis dua li ntawm silicon PIN diode thiab txo qis conduction los ntawm 75%.
Optimizing tshav kub dissipation nrog siab thermal conductivity: Ib tug thermal conductivity ntawm 4.9W / (cm · K) enables sai hloov tshav kub mus rau lub tshav kub dissipation substrate. Kev ntsuam xyuas ntawm lub tshuab hluav taws xob lub cev muaj zog tau pom tias siv SiC Schottky diodes txo cov cuab yeej sib txuas ntawm qhov kub ntawm 40℃thiab txhim kho kev ua haujlwm ntawm 2.3% piv rau cov kev daws teeb meem silicon.
2. Kev tsim kho tshiab: tshem tawm cov neeg nqa khoom tsawg
SiC Schottky diodes txais yuav cov hlau semiconductor barrier qauv, tag nrho tshem tawm cov haiv neeg tsawg carrier txhaj recombination txheej txheem nyob rau hauv PN junctions, thiab lawv rov qab them nqi (Qrr) tsuas yog 1/20 ntawm silicon ceev rov qab diodes. Ntawm qhov hloov pauv zaus ntawm 100kHz, qhov hloov pauv ntawm 650V SiC Schottky diode raug txo los ntawm 82% piv rau cov khoom siv silicon, tso cai rau lub zog hluav taws xob ua haujlwm ntawm cov zaus siab tshaj 200kHz thiab txo qhov ntim ntawm cov khoom sib nqus los ntawm 60%.

3, Kev txheeb xyuas kev ua tau zoo ntawm cov ntawv thov raug xwm txheej
1. Nyob rau hauv lub tshav pob ntawm lub zog tshiab tsheb
Tesla Model 3 lub cev muaj zog maub los siv Cree C3M0075120K SiC MOSFET thiab txuam Schottky diode kom ua tiav:

Hloov zaus nce mus rau 50kHz, inductor ntim txo los ntawm 40%
Lub kaw lus efficiency nce mus txog 98.5%, uas yog 1.2% siab dua cov tshuaj silicon
Ntau yam nce 5-8%
2. Tswj kev lag luam siab -kub rauv
Lub zog hluav taws xob ntawm lub tshuab nruam nruam hauv ib lub tuam txhab steel txais ROHM SCH2080KE SiC Schottky diode. Tom qab ua haujlwm tas li rau 20000 teev ntawm 150℃ib puag ncig:

Cov dej xau tam sim no tseem nyob ruaj khov hauv qab 0.5 μ A
Tus ntaus ntawv tsis ua hauj lwm tus nqi yog 0
Lub voj voog kev tu lub cev tau txuas ntxiv los ntawm 3 lub hlis mus rau 2 xyoos
3. Aerospace fais fab mov
Lub zog hluav taws xob ntawm European Space Agency's Sentinel-6 satellite siv Infineon IDH06G65C5XKSA1 SiC Schottky diodes. Thaum lub tshuab nqus tsev txias thiab kub caij tsheb kauj vab los ntawm -180℃mus rau +150 degree:

Parameter drift<0.5%
Radiation kuj mus txog 100krad (Si)
Qhov hnyav txo los ntawm 30% piv rau cov tshuaj silicon