1N4148/1N4448 High-speed Hloov Diode Parameters

Feature

SOD27 iav encapsulation (DO-35)

High switching ceev: lub sij hawm rov qab siab tshaj plaws ntawm 4 nanoseconds

Nruam rov qab voltage: siab tshaj 75 volts

Repetitive ncov rov qab voltage: siab tshaj 100 volts

Repetitive ncov rau pem hauv ntej tam sim no: siab tshaj 450 mA.

Qhov tseem ceeb ntawm 1N4148 thiab 1N4448:

Forward nruab nrab tam sim no IF=200mA

Tsis rov ua dua rau pem hauv ntej ncov tam sim no IFSM=2A

Dissipated zog Pd=500mW

Qhov siab tshaj qhov sib txuas kub Tj=200 degree

Cia kub Tstg =-65 degree ~ 200 degree

Junction capacitance Cd =4pF

Forward rov qab voltage Vfr =2.5V

Rov qab xau tam sim no IR=25nA ~ 50 μ A